Specification	FFH75H60S

Current - Average Rectified (Io)	75 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.2 V

FFH75H60S Series

75A, 600V, Hyperfast Diode

Part	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case
ON Semiconductor FFH75H60S	200 mA 500 ns	75 ns	600 V	TO-247-2	2.2 V	Standard	175 ░C	-65 C	75 A	Through Hole	100 µA	TO-247-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.41
		10	$ 3.61
		100	$ 2.58
		500	$ 2.14
		1000	$ 2.02

Description

General part information

FFH75H60S Series

The FFH75H60S is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.