Discrete Semiconductor Products

PJS6604_S2_00001

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MOSFETS 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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MOSFETS 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6604_S2_00001

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	3.1 A, 4.4 A
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	447 pF, 443 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	98 mOhm, 48 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V, 1.2 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJS6603_S2_00001	SOT-23-6	5.8 nC 9.8 nC	150 °C	-55 °C	SOT-23-6	N and P-Channel Complementary	2.1 V	1.25 W	Surface Mount	235 pF 396 pF	30 V	MOSFET (Metal Oxide)	48 mOhm 110 mOhm	2.9 A 4.4 A
Panjit International Inc. PJS6604_S2_00001	SOT-23-6		150 °C	-55 °C	SOT-23-6	N and P-Channel Complementary	1.2 V 1.3 V	1.25 W	Surface Mount	443 pF 447 pF	30 V	MOSFET (Metal Oxide)	48 mOhm 98 mOhm	3.1 A 4.4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.13
Mouser	N/A	10000	$ 0.12

General part information

MOSFETS 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

Technical documentation and resources