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RJK0451DPB-00#J5

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NCH POWER MOSFET 40V 35A 7MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 40V 35A 7MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0451DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2010 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 40V 35A 7mohm LFPAK56

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology
Renesas Electronics Corporation RJK0451DPB-00#J5	Surface Mount	4.5 V 10 V	7 mOhm	SC-100 SOT-669	LFPAK	2010 pF	45 W	14 nC	150 °C	N-Channel	35 A	40 V	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1891	$ 1.68

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources