Discrete Semiconductor Products

BD439

Obsolete

MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BD439

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	36 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Medium Power NPN Bipolar Power Transistor

Part	Supplier Device Package	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature
ON Semiconductor BD439	TO-126	3 MHz	NPN	100 µA	40	-55 °C	150 °C	TO-126-3 TO-225AA	36 W	4 A	60 V	Through Hole	800 mV
ON Semiconductor BD439S	TO-126-3	3 MHz	NPN	100 µA	20			TO-126-3 TO-225AA	36 W	4 A	60 V	Through Hole	800 mV	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This series of plastic, medium-power NPN transistors can be used for amplifier and switching applications.Replacement Active Part Number:BD439