Discrete Semiconductor Products

PQMH13Z

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TRANS PREBIAS 2NPN DFN1010B-6

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Discrete Semiconductor Products

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TRANS PREBIAS 2NPN DFN1010B-6

Technical Specifications

Parameters and characteristics for this part

Specification	PQMH13Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	230 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	230 mW
Qualification	AEC-Q101
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	DFN1010B-6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic [Max]	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Grade	Mounting Type	Resistor - Base (R1)	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Qualification	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]
Freescale Semiconductor - NXP PQMH13Z	2 NPN - Pre-Biased (Dual)	Automotive	Surface Mount	4.7 kOhms	230 mW	6-XFDFN Exposed Pad	50 V	100	DFN1010B-6	230 MHz	1 µA	47000 Ohms	AEC-Q101	100 mV	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 230mW Surface Mount DFN1010B-6

Technical documentation and resources