Discrete Semiconductor Products

IHW50N65R6XKSA1

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INFINEON

TRANSISTOR, 650V, 100A, 251W, TO-247 ROHS COMPLIANT: YES

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DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

IHW50N65R6XKSA1

Active

INFINEON

TRANSISTOR, 650V, 100A, 251W, TO-247 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IHW50N65R6XKSA1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	199 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	251 W
Reverse Recovery Time (trr)	108 ns
Supplier Device Package	PG-TO247-3
Switching Energy	660 µJ, 1.5 mJ
Td (on/off) @ 25°C	21 ns, 261 ns
Test Condition	10 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

IHW50 Series

Part	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Switching Energy	Test Condition	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Power - Max [Max]	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type
INFINEON IHW50N65R6XKSA1	100 A	1.6 V	175 °C	-40 °C	PG-TO247-3	1.5 mJ 660 µJ	10 Ohm 15 V 50 A 400 V	150 A	21 ns 261 ns	251 W	TO-247-3	199 nC	650 V	108 ns	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 3.92
		10	$ 3.55
		50	$ 2.19
		100	$ 1.80
		200	$ 1.69
Digikey	N/A	152	$ 3.48
	Tube	1	$ 4.50
		30	$ 2.50
		120	$ 2.05
		510	$ 1.73
		1020	$ 1.61
		2010	$ 1.58
Newark	Each	1	$ 3.83
		10	$ 3.39
		25	$ 2.34
		50	$ 2.14
		100	$ 1.94
		480	$ 1.85
		720	$ 1.57

Description

General part information

IHW50 Series

Reverse Conducting R6650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology. Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet