Discrete Semiconductor Products

1SS389,L3F

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DIODES, 10 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)

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Discrete Semiconductor Products

Active

DIODES, 10 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)

Technical Specifications

Parameters and characteristics for this part

Specification	1SS389,L3F

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SC-79, SOD-523
Speed	200 mA
Speed	Any Speed
Supplier Device Package	ESC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If [Max]	500 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Supplier Device Package	Speed	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
Toshiba Semiconductor and Storage 1SS389,L3F	10 V	Surface Mount	Schottky	SC-79 SOD-523	500 mV	125 °C	20 µA	40 pF	ESC	200 mA	Any Speed	100 mA
Toshiba Semiconductor and Storage 1SS389,H3F	40 V	Surface Mount	Schottky	SC-79 SOD-523		125 °C	5 µA	25 pF	ESC	200 mA	Any Speed	100 mA	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	38736	$ 0.14

General part information

DIODES, 10 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)

Technical documentation and resources