Specification	PSMN4R2-30MLDX

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1795 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

PSMN4R2-30MLD Series

N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Part	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Nexperia USA Inc. PSMN4R2-30MLDX	N-Channel	20 V	29.3 nC	70 A	LFPAK33	175 °C	-55 °C	Schottky Diode (Body)	4.5 V 10 V	30 V	Surface Mount	65 W	4.3 mOhm	MOSFET (Metal Oxide)	1795 pF	2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2821	$ 1.68

Description

General part information

PSMN4R2-30MLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.