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SOT1215
Discrete Semiconductor Products

PMXB65UPEZ

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Nexperia USA Inc.

TRANS MOSFET P-CH 12V 3.2A 3-PIN DFN T/R

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SOT1215
Discrete Semiconductor Products

PMXB65UPEZ

Active
Nexperia USA Inc.

TRANS MOSFET P-CH 12V 3.2A 3-PIN DFN T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMXB65UPEZ
Current - Continuous Drain (Id) @ 25°C3.2 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]634 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XDFN Exposed Pad
Power Dissipation (Max)317 mW
Power Dissipation (Max)8.33 W
Rds On (Max) @ Id, Vgs72 mOhm
Supplier Device PackageDFN1010D-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.07
2000$ 0.06
Digi-Reel® 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.07
2000$ 0.06
N/A 78$ 0.48
Tape & Reel (TR) 5000$ 0.06
10000$ 0.05

Description

General part information

PMXB65UPE Series

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

Exposed drain pad for excellent thermal conduction