Discrete Semiconductor Products

IRGB15B60KDPBF

Obsolete

IGBT 600V 31A 208W TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 600V 31A 208W TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRGB15B60KDPBF

Current - Collector (Ic) (Max)	31 A
Current - Collector Pulsed (Icm)	62 A
Gate Charge	56 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	208 W
Reverse Recovery Time (trr)	92 ns
Supplier Device Package	TO-220AB
Switching Energy	220 µJ, 340 µJ
Td (on/off) @ 25°C [custom]	184 ns
Td (on/off) @ 25°C [custom]	34 ns
Test Condition	15 V, 400 V, 15 A, 22 Ohm
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Mounting Type	Current - Collector Pulsed (Icm)	Test Condition	Switching Energy	Current - Collector (Ic) (Max)	Gate Charge	Reverse Recovery Time (trr)
INFINEON IRGB15B60KDPBF	TO-220-3	TO-220AB	2.2 V	150 °C	-55 °C	600 V	208 W	184 ns	34 ns	NPT	Through Hole	62 A	15 V 15 A 22 Ohm 400 V	220 µJ 340 µJ	31 A	56 nC	92 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT NPT 600 V 31 A 208 W Through Hole TO-220AB

Technical documentation and resources