
Discrete Semiconductor Products
PBSS4041NZ,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 7 A NPN LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS4041NZ,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 7 A NPN LOW VCESAT TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4041NZ,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 7 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 250 |
| Frequency - Transition | 105 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 2.6 W |
| Supplier Device Package | SOT-223 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 195 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS4041NZ Series
NPN low VCEsattransistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources