Discrete Semiconductor Products
PSMN3R5-80YSFX
ActiveNexperia USA Inc.
NEXTPOWER 80 V, 3.5 MOHM, 150 A, N-CHANNEL MOSFET IN LFPAK56E PACKAGE
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Discrete Semiconductor Products
PSMN3R5-80YSFX
ActiveNexperia USA Inc.
NEXTPOWER 80 V, 3.5 MOHM, 150 A, N-CHANNEL MOSFET IN LFPAK56E PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN3R5-80YSFX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 150 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 108 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7227 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1023, 4-LFPAK |
| Power Dissipation (Max) | 294 W |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3253 | $ 4.78 | |
Description
General part information
PSMN3R5-80YSF Series
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Documents
Technical documentation and resources