PSC20120JJ
Active1200 V, 20 A SIC SCHOTTKY DIODE IN D2PAK R2P
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PSC20120JJ
Active1200 V, 20 A SIC SCHOTTKY DIODE IN D2PAK R2P
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSC20120JJ |
|---|---|
| Capacitance @ Vr, F | 1150 pf |
| Current - Reverse Leakage @ Vr | 180 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), Variant |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | D2PAK R2P |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 12.66 | |
Description
General part information
PSC20120J Series
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Documents
Technical documentation and resources