Discrete Semiconductor Products

PJQ5440_R2_00001

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40V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5440_R2_00001

Current - Continuous Drain (Id) @ 25°C	17 A, 100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	5214 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Grade	Qualification
Panjit International Inc. PJQ5440_R2_00001	N-Channel	2.8 mOhm	5214 pF	40 V	2.5 V	DFN5060-8	MOSFET (Metal Oxide)	Surface Mount	8-PowerVDFN	4.5 V 10 V	20 V	50 nC	150 °C	-55 °C	17 A 100 A
Panjit International Inc. PJQ5440-AU_R2_000A1	N-Channel	2.8 mOhm	5214 pF	40 V	2.5 V	DFN5060-8	MOSFET (Metal Oxide)	Surface Mount	8-PowerVDFN	4.5 V 10 V	20 V	50 nC	175 °C	-55 °C	17 A 100 A	2.4 W 83.3 W	Automotive	AEC-Q101

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General part information

N-Channel 40 V 17A (Ta), 100A (Tc) 2W (Ta), 70W (Tc) Surface Mount DFN5060-8

Technical documentation and resources

No documents available