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DIRECTFET S1
Discrete Semiconductor Products

IRF6665TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 62 MOHM;

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DIRECTFET S1
Discrete Semiconductor Products

IRF6665TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 62 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6665TRPBF
Current - Continuous Drain (Id) @ 25°C19 A, 4.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]530 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric SH
Power Dissipation (Max)42 W, 2.2 W
Rds On (Max) @ Id, Vgs62 mOhm
Supplier Device PackageDIRECTFET™ SH
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IRF6665 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources