Discrete Semiconductor Products

SIHP18N50C-E3

LTB

MOSFET N-CH 500V 18A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP18N50C-E3

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	76 nC, 76 nC
Input Capacitance (Ciss) (Max)	2942 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	223 W
Rds On (Max)	270 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Vgs(th) (Max)	Technology	Power Dissipation (Max)	Mounting Type	Package Name	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Package / Case	Gate Charge (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale SIHP18N50C-E3	500 V	-55 °C	150 °C	30 V	5 V	MOSFET (Metal Oxide)	223 W	Through Hole	TO-220AB	N-Channel	18 A	10 V	270 mOhm	TO-220-3	76 nC 76 nC	2942 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 500 V 18A (Tc) 223W (Tc) Through Hole TO-220AB

Technical documentation and resources