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PowerPAK® 1212-8 Dual
Discrete Semiconductor Products

SI7900AEDN-T1-GE3

Obsolete
Vishay Dale

MOSFET 2N-CH 20V 6A PPAK 1212

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Search across all available documentation for this part.

PowerPAK® 1212-8 Dual
Discrete Semiconductor Products

SI7900AEDN-T1-GE3

Obsolete
Vishay Dale

MOSFET 2N-CH 20V 6A PPAK 1212

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7900AEDN-T1-GE3
Channel Count2
ConfigurationN-Channel (Dual) Common Drain
Current - Continuous Drain (Id)6 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Max)16 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8 Dual
Package NamePowerPAK® 1212-8 Dual
Power - Max1.5 W
Rds On (Max)26 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 3000$ 0.46<1d
6000$ 0.43
9000$ 0.42

CAD

3D models and CAD resources for this part

Description

General part information

SI7900 Series

Mosfet Array 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual

Documents

Technical documentation and resources