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TO-220AB PKG
Discrete Semiconductor Products

IRF3703PBF

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INFINEON

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 2.8 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRF3703PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 2.8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF3703PBF
Current - Continuous Drain (Id) @ 25°C210 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)7 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs209 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8250 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)3.8 W, 230 W
Rds On (Max) @ Id, Vgs2.8 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 167$ 1.80
167$ 1.80
N/A 0$ 0.00
0$ 0.00
7812$ 2.05
7812$ 2.05
Tube 1$ 4.34
1$ 4.34
10$ 2.86
10$ 2.86
100$ 2.03
100$ 2.03
500$ 1.67
500$ 1.67
1000$ 1.56
1000$ 1.56

Description

General part information

IRF3703 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources