Discrete Semiconductor Products

NTBLS1D7N08H

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MOSFET - POWER, SINGLE, N-CHANNEL, TOLL, 80 V, 1.7 MΩ, 203 A

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Discrete Semiconductor Products

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MOSFET - POWER, SINGLE, N-CHANNEL, TOLL, 80 V, 1.7 MΩ, 203 A

Technical Specifications

Parameters and characteristics for this part

Specification	NTBLS1D7N08H

Current - Continuous Drain (Id) @ 25°C	29 A, 203 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	121 nC
Input Capacitance (Ciss) (Max) @ Vds	7675 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	167 W, 3.5 W
Rds On (Max) @ Id, Vgs [Max]	1.7 mOhm
Supplier Device Package	8-HPSOF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.7 mΩ, 203 A

Part	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
ON Semiconductor NTBLS1D7N08H	4 V	8-HPSOF	3.5 W 167 W	-55 °C	175 ░C	80 V	8-PowerSFN	29 A 203 A	7675 pF	1.7 mOhm	MOSFET (Metal Oxide)	20 V	6 V 10 V	N-Channel	121 nC	Surface Mount

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General part information

MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.7 mΩ, 203 A

Technical documentation and resources