Discrete Semiconductor Products

SQ3425EV-T1_BE3

LTB

MOSFET P-CH 20V 7.4A 6-TSOP

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Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 7.4A 6-TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3425EV-T1_BE3

Current - Continuous Drain (Id) (Tc)	7.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	10.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	840 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Rds On (Max)	Qualification	Gate Charge (Max)	Mounting Type	Technology	Power Dissipation (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	FET Type	Grade	Vgs (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
Vishay Dale SQ3425EV-T1_BE3	20 V	-55 °C	175 °C	SOT-23-6 Thin TSOT-23-6	60 mOhm	AEC-Q101	10.3 nC	Surface Mount	MOSFET (Metal Oxide)	5 W	6-TSOP	7.4 A	P-Channel	Automotive	12 V	840 pF	1.4 V	2.5 V	4.5 V
Vishay Dale SQ3425EV-T1_GE3	20 V	-55 °C	175 °C	SOT-23-6 Thin TSOT-23-6	60 mOhm	AEC-Q101	10.3 nC	Surface Mount	MOSFET (Metal Oxide)	5 W	6-TSOP	7.4 A	P-Channel	Automotive	12 V	840 pF	1.4 V	2.5 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 20 V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources