Discrete Semiconductor Products

PDTA143TS,126

Obsolete

TRANS PREBIAS PNP 50V TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS PNP 50V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PDTA143TS,126

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min)	200
Mounting Type	Through Hole
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92-3
Power - Max	0.5 W
Resistor - Base (R1) Resistance	4.7 kOhm
Transistor Type	Pre-Biased, PNP
Vce Saturation (Max)	150 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

Part	Mounting Type	DC Current Gain (hFE) (Min)	Package / Case	Current - Collector (Ic) (Max)	Vce Saturation (Max)	Resistor - Base (R1) Resistance	Power - Max	Current - Collector Cutoff (Max)	Package Name	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Resistor - Emitter Base (R2)	Resistors Included
NXP USA Inc. PDTA143TS,126	Through Hole	200	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	0.1 mA	150 mV	4.7 kOhm	0.5 W	1 µA	TO-92-3	50 V	PNP Pre-Biased
NXP USA Inc. PDTA143ZK,135	Surface Mount	100	SC-59 SOT-23-3 TO-236-3	0.1 mA	100 mV	4.7 kOhm	250 mW	1 µA	SMT3; MPAK	50 V	PNP Pre-Biased	47 kOhm	R1 R2
NXP USA Inc. PDTA143EE,115	Surface Mount	30	SC-75 SOT-416	0.1 mA	150 mV	4.7 kOhm	150 mW	1 µA	SC-75	50 V	PNP Pre-Biased	4.7 kOhms
NXP USA Inc. PDTA143EK,115	Surface Mount	30	SC-59 SOT-23-3 TO-236-3	0.1 mA	150 mV	4.7 kOhm	250 mW	1 µA	SMT3; MPAK	50 V	PNP Pre-Biased	4.7 kOhms
NXP USA Inc. PDTA143TE,115	Surface Mount	200	SC-75 SOT-416	0.1 mA	150 mV	4.7 kOhm	150 mW	100 nA	SC-75	50 V	PNP Pre-Biased
NXP USA Inc. PDTA143EEF,115	Surface Mount	30	SC-89 SOT-490	0.1 mA	150 mV	4.7 kOhm	250 mW	1 µA	SC-89	50 V	PNP Pre-Biased	4.7 kOhms
NXP USA Inc. PDTA143ZK,115	Surface Mount	100	SC-59 SOT-23-3 TO-236-3	0.1 mA	100 mV	4.7 kOhm	250 mW	1 µA	SMT3; MPAK	50 V	PNP Pre-Biased	47 kOhm
NXP USA Inc. PDTA143XK,115	Surface Mount	50	SC-59 SOT-23-3 TO-236-3	0.1 mA	150 mV	4.7 kOhm	250 mW	1 µA	SMT3; MPAK	50 V	PNP Pre-Biased	10 kOhms	R1 R2
NXP USA Inc. PDTA143ZE,115	Surface Mount	100	SC-75 SOT-416	0.1 mA	100 mV	4.7 kOhm	150 mW	1 µA	SC-75	50 V	PNP Pre-Biased	47 kOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3

Technical documentation and resources