Discrete Semiconductor Products

IRGP4640D-EPBF

Obsolete

IRGP4640 - DISCRETE IGBT WITH AN

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Discrete Semiconductor Products

Obsolete

IRGP4640 - DISCRETE IGBT WITH AN

Technical Specifications

Parameters and characteristics for this part

Specification	IRGP4640D-EPBF

Current - Collector (Ic) (Max) [Max]	65 A
Gate Charge	75 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	89 ns
Supplier Device Package	TO-247AC
Switching Energy	115 µJ, 600 µJ
Td (on/off) @ 25°C	104 ns, 41 ns
Test Condition	10 Ohm, 400 V, 24 A, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Gate Charge	Switching Energy	Test Condition	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
INFINEON IRGP4640D-EPBF
INFINEON IRGP4640-EPBF	105 ns	40 ns	75 nC	100 µJ 600 µJ	10 Ohm 15 V 24 A 400 V	250 W	TO-247AD	65 A	1.9 V	TO-247-3	600 V	Through Hole	175 °C	-40 °C
INFINEON IRGP4640DPBF			75 nC	115 µJ 600 µJ	10 Ohm 15 V 24 A 400 V	250 W	TO-247AD	65 A	1.9 V	TO-247-3	600 V	Through Hole	175 °C	-55 °C	89 ns	41 ns 104 ns
INFINEON IRGP4640D-EPBF			75 nC	115 µJ 600 µJ	10 Ohm 15 V 24 A 400 V	250 W	TO-247AC	65 A	1.9 V	TO-247-3	600 V	Through Hole	175 °C	-55 °C	89 ns	41 ns 104 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 65 A 250 W Through Hole TO-247AC

Technical documentation and resources