Discrete Semiconductor Products

IPU78CN10N G

Obsolete

MOSFET N-CH 100V 13A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 13A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU78CN10N G

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	716 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)
INFINEON IPU78CN10N G	13 A	IPAK TO-251-3 Short Leads TO-251AA	78 mOhm	20 V	PG-TO251-3	MOSFET (Metal Oxide)	10 V	Through Hole	11 nC	175 °C	-55 °C	100 V	4 V	716 pF	N-Channel	31 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.44

General part information

N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO251-3

Technical documentation and resources