Discrete Semiconductor Products

IPI90N06S4L04AKSA2

Obsolete

MOSFET N-CH 60V 90A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 90A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI90N06S4L04AKSA2

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	13000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)
INFINEON IPI90N06S4L04AKSA2	90 A	175 °C	-55 °C	2.2 V	16 V	I2PAK TO-262-3 Long Leads TO-262AA	4.5 V 10 V	Through Hole	170 nC	Automotive	AEC-Q101	13000 pF	N-Channel	150 W	MOSFET (Metal Oxide)	60 V

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General part information

N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources