Specification	PSMN045-80YS,115

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	675 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max) [Max]	56 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN045-80YS Series

N-channel LFPAK 80 V 45 mΩ standard level MOSFET

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case
Nexperia USA Inc. PSMN045-80YS,115	80 V	24 A	20 V	MOSFET (Metal Oxide)	175 °C	-55 °C	Surface Mount	10 V	N-Channel	675 pF	45 mOhm	56 W	12.5 nC	LFPAK56 Power-SO8	SC-100 SOT-669

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	530	$ 1.30

Description

General part information

PSMN045-80YS Series

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.