Discrete Semiconductor Products

RJK6002DPH-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 600V 2A 6800MOHM TO-251

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 600V 2A 6800MOHM TO-251

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6002DPH-E0#T2

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	165 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Rds On (Max) @ Id, Vgs	6.8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Nch Single Power Mosfet 600V 2A 6800Mohm To-251

Part	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation RJK6002DPH-E0#T2	4.5 V	MOSFET (Metal Oxide)	30 V	IPAK TO-251-3 Short Leads TO-251AA	2 A	6.8 Ohm	6.2 nC	600 V	10 V	N-Channel	150 °C	Through Hole	165 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3467	$ 1.27

General part information

The RJK6002DPH-E0 is a Nch Single Power Mosfet 600V 2A 6800Mohm To-251.

Technical documentation and resources