
DS1245AB-120+
ActiveNVRAM NVSRAM PARALLEL 1MBIT 5V 32-PIN EDIP TUBE
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DS1245AB-120+
ActiveNVRAM NVSRAM PARALLEL 1MBIT 5V 32-PIN EDIP TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | DS1245AB-120+ |
|---|---|
| Access Time | 120 ns |
| Memory Format | NVSRAM |
| Memory Interface | Parallel |
| Memory Organization | 128 K |
| Memory Size | 1 Mbit |
| Memory Type | Non-Volatile |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 70 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 32-DIP Module |
| Package / Case | 15.24 mm |
| Package / Case | 0.6 in |
| Supplier Device Package | 32-EDIP |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 5.25 V |
| Voltage - Supply [Min] | 4.75 V |
| Write Cycle Time - Word, Page | 120 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DS1245AB Series
The DS1245 1024k Nonvolatile (NV) SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is nconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Documents
Technical documentation and resources