Discrete Semiconductor Products

MCM1216A-TP

Active

MOSFET P-CH 20V 16A DFN2020-6JA

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 20V 16A DFN2020-6JA

Technical Specifications

Parameters and characteristics for this part

Specification	MCM1216A-TP

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	18 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	DFN2020-6J
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type
Micro Commercial Components MCM1216A-TP	-55 °C	150 °C	2050 pF	MOSFET (Metal Oxide)	30 nC	18 W	10 V	Surface Mount	DFN2020-6J	16 A	1 V	20 V	17 mOhm	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 16A (Tc) 18W Surface Mount DFN2020-6J

Technical documentation and resources