Discrete Semiconductor Products

SI8445DB-T2-E1

Obsolete

MOSFET P-CH 20V 9.8A 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 9.8A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8445DB-T2-E1

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max)	1.8 W, 11.4 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	850 mV

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SI8445DB-T2-E1	4-XFBGA CSPBGA	-55 °C	150 °C	1.8 W 11.4 W	MOSFET (Metal Oxide)	P-Channel	84 mOhm	4-Microfoot	850 mV	1.2 V 4.5 V	Surface Mount	5 V	20 V	700 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 9.8A (Tc) 1.8W (Ta), 11.4W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources