Discrete Semiconductor Products

SFT18G

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DIODE GEN PURP 600V 1A TS-1

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	SFT18G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Package / Case	Technology	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation SFT18G	150 °C	-55 °C	TS-1	200 mA 500 ns	T-18 Axial	Standard	1 A	Through Hole	1.7 V	35 ns	10 pF	600 V	5 µA

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General part information

Diode 600 V 1A Through Hole TS-1

Technical documentation and resources