Discrete Semiconductor Products

IPB065N15N3GE8187ATMA1

Obsolete

MOSFET N-CH 150V 130A TO263-7

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 130A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IPB065N15N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
INFINEON IPB065N06L G	5100 pF	60 V	Surface Mount	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	175 °C	-55 °C	N-Channel	PG-TO263-3-2	6.2 mOhm	20 V	MOSFET (Metal Oxide)	250 W	157 nC
INFINEON IPB065N15N3GE8187ATMA1	7300 pF	150 V	Surface Mount	8 V 10 V	D2PAK (6 Leads + Tab) TO-263-7	4 V	175 °C	-55 °C	N-Channel	PG-TO263-7	6.5 mOhm	20 V	MOSFET (Metal Oxide)	300 W		93 nC	130 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.61

General part information

N-Channel 150 V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources