Discrete Semiconductor Products

SQS405ENW-T1_GE3

Obsolete

MOSFET P-CH 12V 16A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 16A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQS405ENW-T1_GE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2650 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	39 W
Qualification	AEC-Q101
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	FET Type	Technology	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Qualification	Package Name	Package / Case	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Grade
Vishay Dale SQS405EN-T1_GE3	-55 °C	175 °C	75 nC	1 V	12 V	39 W	2650 pF	P-Channel	MOSFET (Metal Oxide)	20 mOhm	2.5 V	4.5 V	AEC-Q101	PowerPAK® 1212-8	PowerPAK® 1212-8	Surface Mount	8 V	16 A	Automotive
Vishay Dale SQS405ENW-T1_GE3	-55 °C	175 °C	75 nC	1 V	12 V	39 W	2650 pF	P-Channel	MOSFET (Metal Oxide)	20 mOhm	2.5 V	4.5 V	AEC-Q101	PowerPAK® 1212-8	PowerPAK® 1212-8	Surface Mount	8 V	16 A	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 12 V 16A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources