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TO-220AB PKG
Discrete Semiconductor Products

IRFB38N20DPBF

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INFINEON

POWER MOSFET, N CHANNEL, 200 V, 43 A, 0.054 OHM, TO-220AB, THROUGH HOLE

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TO-220AB PKG
Discrete Semiconductor Products

IRFB38N20DPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 200 V, 43 A, 0.054 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB38N20DPBF
Current - Continuous Drain (Id) @ 25°C43 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs91 nC
Input Capacitance (Ciss) (Max) @ Vds2900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)3.8 W, 300 W
Rds On (Max) @ Id, Vgs54 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 189$ 1.59
189$ 1.59
226$ 1.33
226$ 1.33
N/A 185$ 3.39
185$ 3.39
3340$ 1.91
3340$ 1.91
Tube 1$ 2.74
1$ 2.74
50$ 2.20
50$ 2.20
100$ 1.81
100$ 1.81
500$ 1.53
500$ 1.53
1000$ 1.30
1000$ 1.30
2000$ 1.23
2000$ 1.23
5000$ 1.19
5000$ 1.19
NewarkEach 1$ 3.29
10$ 2.00
100$ 1.81
500$ 1.52
1000$ 1.42
3000$ 1.37
5000$ 1.36

Description

General part information

IRFB38 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.