Specification	2SA2169-E

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	950 mW
Supplier Device Package	TP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	580 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2SA2169 Series

Bipolar Transistor, -50V, -10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Part	Operating Temperature	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	Frequency - Transition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor 2SA2169-E	150 °C	TP	PNP	10 µA	Through Hole	130 MHz	950 mW	50 V	200	IPAK TO-251-3 Short Leads TO-251AA	580 mV
ON Semiconductor 2SA2169-TL-E	150 °C	TP-FA	PNP	10 µA	Surface Mount	130 MHz	950 mW	50 V	200	DPAK (2 Leads + Tab) SC-63 TO-252-3	580 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SA2169 is a Bipolar Transistor, -50V, -10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Applications.