Discrete Semiconductor Products

RJK1054DPB-00#J5

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NCH POWER MOSFET 100V 20A 22MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 100V 20A 22MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1054DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 20A 22mohm LFPAK56

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation RJK1054DPB-00#J5	27 nC	150 °C	MOSFET (Metal Oxide)	SC-100 SOT-669	20 A	Surface Mount	LFPAK	10 V	N-Channel	22 mOhm	20 V	55 W	100 V	2000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3843	$ 3.24

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources