SE80PWBHM3/I

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DIODE GEN PURP 100V 8A SLIMDPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 8A SLIMDPAK

Technical Specifications

Parameters and characteristics for this part

Part	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Current - Average Rectified (Io)	Supplier Device Package	Grade	Speed	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Qualification
Vishay General Semiconductor - Diodes Division SE80PWDHM3/I	Surface Mount	-40 °C	175 ░C	Standard	8 A	SlimDPAK	Automotive	Standard Recovery >500ns	200 mA	15 µA	1.12 V	2.4 µs	200 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101
Vishay General Semiconductor - Diodes Division SE80PWBHM3/I							Automotive								AEC-Q101
Vishay General Semiconductor - Diodes Division SE80PWJ-M3/I	Surface Mount	-40 °C	175 ░C	Standard	8 A	SlimDPAK		Standard Recovery >500ns	200 mA	15 µA	1.12 V	2.4 µs	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SE80PWG-M3/I	Surface Mount	-40 °C	175 ░C	Standard	8 A	SlimDPAK		Standard Recovery >500ns	200 mA	15 µA	1.12 V	2.4 µs	400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SE80PWJHM3/I	Surface Mount	-40 °C	175 ░C	Standard	8 A	SlimDPAK	Automotive	Standard Recovery >500ns	200 mA	15 µA	1.12 V	2.4 µs	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101

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Diode

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