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Discrete Semiconductor Products
NXH600B100H4Q2F2S1G
ActiveON Semiconductor
SI/SIC HYBRID MODULES, 3 CHANNEL FLYING CAPACITOR BOOST 1000 V, 200 A IGBT, 1200 V, 60 A SIC DIODE
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Search across all available documentation for this part.
Discrete Semiconductor Products
NXH600B100H4Q2F2S1G
ActiveON Semiconductor
SI/SIC HYBRID MODULES, 3 CHANNEL FLYING CAPACITOR BOOST 1000 V, 200 A IGBT, 1200 V, 60 A SIC DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH600B100H4Q2F2S1G |
|---|---|
| Configuration | Three Level Inverter |
| Current - Collector (Ic) (Max) [Max] | 173 A |
| Current - Collector Cutoff (Max) [Max] | 20 µA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 12687.7 pF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | True |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 422 W |
| Supplier Device Package | 56-PIM |
| Supplier Device Package [x] | 93 |
| Supplier Device Package [y] | 47 |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1000 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 190.35 | |
| 10 | $ 182.31 | |||
| 36 | $ 178.28 | |||
| Newark | Each | 25 | $ 173.87 | |
| ON Semiconductor | N/A | 1 | $ 176.96 | |
Description
General part information
NXH600B100H4Q2F2S1G Series
The NXH600B100H4Q2F2S1G is a three channel Flying Capacitor Boost module. Each channel contains two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor.
Documents
Technical documentation and resources