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TSM230N06CP
Discrete Semiconductor Products

TSM230N06CP

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Taiwan Semiconductor Corporation

60V, 50A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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TSM230N06CP
Discrete Semiconductor Products

TSM230N06CP

Active
Taiwan Semiconductor Corporation

60V, 50A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM230N06CP
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1680 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)53 W
Rds On (Max) @ Id, Vgs [Max]23 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.28
Tape & Reel (TR) 5000$ 0.84
10000$ 0.81

Description

General part information

TSM230 Series

N-Channel 60 V 50A (Tc) 53W (Tc) Surface Mount TO-252 (DPAK)