Specification	RN1412,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	22 kOhms
Resistors Included	R1 Only
Supplier Device Package	S-Mini
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN1412 Series

Part	Resistors Included	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Resistor - Base (R1)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage RN1412,LF	R1 Only	S-Mini	120	NPN - Pre-Biased	22 kOhms	200 mW	100 mA	300 mV	Surface Mount	SC-59 SOT-23-3 TO-236-3	50 V	250 MHz	100 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini

Technical documentation and resources