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ONSEMI MMUN2236LT1G
Discrete Semiconductor Products

MMBT2907ALT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 60 V, 600 MA, 300 MW, SOT-23, SURFACE MOUNT

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ONSEMI MMUN2236LT1G
Discrete Semiconductor Products

MMBT2907ALT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 60 V, 600 MA, 300 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT2907ALT1G
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition200 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.02
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.01
NewarkEach (Supplied on Cut Tape) 1$ 0.14
50$ 0.08
100$ 0.04
250$ 0.04
500$ 0.03
1000$ 0.03
2500$ 0.03
5000$ 0.03
ON SemiconductorN/A 1$ 0.01

Description

General part information

MMBT2907AL Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.