Specification	SB80W10T-TL-H

Current - Average Rectified (Io) (per Diode)	8 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Speed	200 mA, 500 ns
Supplier Device Package	TP-FA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	800 mV

SB80W10T Series

Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Technology	Diode Configuration	Current - Average Rectified (Io) (per Diode)
ON Semiconductor SB80W10T-TL-H	150 °C	-55 °C	Surface Mount	100 V	200 mA 500 ns	800 mV	TP-FA	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 µA	Schottky	1 Pair Common Cathode	8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SB80W10T Series

SB80W10T is Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode for High frequency rectification(switching regulators, converters, choppers).