Discrete Semiconductor Products
NTHD3102CT1G
ObsoleteON Semiconductor
COMPLEMENTARY CHIPFET™ POWER MOSFET 20V
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Discrete Semiconductor Products
NTHD3102CT1G
ObsoleteON Semiconductor
COMPLEMENTARY CHIPFET™ POWER MOSFET 20V
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTHD3102CT1G |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4 A, 3.1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 510 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 1.1 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | ChipFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.02 | |
Description
General part information
NTHD3102C Series
Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET™
Documents
Technical documentation and resources