Specification	FDB42AN15A0-F085

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB42AN15_F085 Series

N-Channel PowerTrench® 150V, 35A, 42mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Qualification	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDB42AN15A0-F085	-55 °C	175 ░C	10 V	TO-263 (D2PAK)	AEC-Q101	N-Channel	150 W	4 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2040 pF	150 V	MOSFET (Metal Oxide)	42 mOhm	20 V	Automotive	36 nC	35 A
ON Semiconductor FDB42AN15A0	-55 °C	175 ░C	6 V 10 V	TO-263 (D2PAK)		N-Channel	150 W	4 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		150 V	MOSFET (Metal Oxide)	42 mOhm	20 V			5 A 35 A	39 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB42AN15_F085 Series

N-Channel PowerTrench®150V, 35A, 42mΩ, Fairchild’s latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.