Discrete Semiconductor Products

IXFX66N85X

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 850V 66A 3-PIN(3+TAB) PLUS 247

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Discrete Semiconductor Products

IXFX66N85X

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 850V 66A 3-PIN(3+TAB) PLUS 247

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX66N85X

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	850 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1250 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFX66N85X Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Littelfuse/Commercial Vehicle Products IXFX66N85X	1250 W	66 A	10 V	Through Hole	MOSFET (Metal Oxide)	850 V	65 mOhm	PLUS247™-3	30 V	230 nC	8900 pF	N-Channel	TO-247-3 Variant	5.5 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 18.77
		30	$ 17.12
Newark	Each	250	$ 17.95

Description

General part information

IXFX66N85X Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

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