Discrete Semiconductor Products

RD3L01BATTL1

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TRANSISTOR MOSFET P-CHANNEL -60V ±10A 3-PIN TO-252 T/R

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Discrete Semiconductor Products

Active

TRANSISTOR MOSFET P-CHANNEL -60V ±10A 3-PIN TO-252 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	RD3L01BATTL1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pch -60V -10A, TO-252 (DPAK), Power MOSFET

Part	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Package / Case
Rohm Semiconductor RD3L01BATTL1	Surface Mount	MOSFET (Metal Oxide)	4.5 V 10 V	10 A	20 V	P-Channel	1200 pF	84 mOhm	TO-252	15.2 nC	150 °C	60 V	2.5 V	26 W	DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

RD3L01BAT is a low on-resistance power MOSFET suitable for switching applications.

Technical documentation and resources