Discrete Semiconductor Products

RD3L01BATTL1

Active

TRANSISTOR MOSFET P-CHANNEL -60V ±10A 3-PIN TO-252 T/R

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANSISTOR MOSFET P-CHANNEL -60V ±10A 3-PIN TO-252 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	RD3L01BATTL1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pch -60V -10A, TO-252 (DPAK), Power MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RD3L01BATTL1	1200 pF	10 A	P-Channel	60 V	150 °C	Surface Mount	TO-252	MOSFET (Metal Oxide)	2.5 V	4.5 V 10 V	15.2 nC	26 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	84 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RD3L01BAT is a low on-resistance power MOSFET suitable for switching applications.

Technical documentation and resources