Discrete Semiconductor Products

VBO22-16NO8

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BRIDGE RECT 1P 1.6KV 21A FO-B

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Discrete Semiconductor Products

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BRIDGE RECT 1P 1.6KV 21A FO-B

Technical Specifications

Parameters and characteristics for this part

Specification	VBO22-16NO8

Current - Average Rectified (Io)	21 A
Current - Reverse Leakage @ Vr	300 µA
Diode Type	Single Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-Square, FO-B
Supplier Device Package	FO-B
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	2.2 V
Voltage - Peak Reverse (Max)	1.6 kV

Bipolar Module - Diode FO

Part	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Diode Type	Package / Case	Technology
LITTELFUSE VBO22-18NO8	QC Terminal	21 A	300 µA	2.2 V	1.8 kV	-40 °C	150 °C	FO-B	Single Phase	4-Square FO-B	Standard
LITTELFUSE VBO22-08NO8	QC Terminal	21 A	300 µA	2.2 V	800 V	-40 °C	150 °C	FO-B	Single Phase	4-Square FO-B	Standard
LITTELFUSE VBO22-16NO8	QC Terminal	21 A	300 µA	2.2 V	1.6 kV	-40 °C	150 °C	FO-B	Single Phase	4-Square FO-B	Standard
LITTELFUSE VBO22-12NO8	QC Terminal	21 A	300 µA	2.2 V	1.2 kV	-40 °C	150 °C	FO-B	Single Phase	4-Square FO-B	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.