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TTA004B,Q
Discrete Semiconductor Products

TTC015B,Q

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Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 80 V, 2 A, TO-126N

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TTA004B,Q
Discrete Semiconductor Products

TTC015B,Q

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 80 V, 2 A, TO-126N

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTTC015B,Q
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition150 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]1.5 W
Supplier Device PackageTO-126N
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 356$ 0.88
Tray 1$ 0.90
10$ 0.56
25$ 0.47
80$ 0.38
230$ 0.32
440$ 0.29
945$ 0.25
2400$ 0.22
4900$ 0.21

Description

General part information

TTC015B Series

Bipolar Transistors, NPN Bipolar Transistor, 80 V, 2 A, TO-126N