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Technical Specifications
Parameters and characteristics for this part
| Specification | M1MA151KT1 |
|---|---|
| Capacitance @ Vr, F | 2 pF |
| Current - Average Rectified (Io) | 100 mA |
| Current - Reverse Leakage @ Vr | 100 nA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | SC-59 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
M1MA151WK Series
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
Documents
Technical documentation and resources