Specification	SCT4013DW7TL

Current - Continuous Drain (Id) @ 25°C	98 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4580 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	267 W
Rds On (Max) @ Id, Vgs	16.9 mOhm
Supplier Device Package	TO-263-7L
Vgs (Max) [Max]	21 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	4.8 V

SCT4013DW7 Series

750V, 98A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Mounting Type	Operating Temperature	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor SCT4013DW7TL	4.8 V	170 nC	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	175 °C	TO-263-7L	750 V	16.9 mOhm	21 V	-4 V	267 W	98 A	4580 pF	18 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 36.33
		10	$ 32.28
		100	$ 28.23
	Digi-Reel®	1	$ 36.33
		10	$ 32.28
		100	$ 28.23
	N/A	500	$ 6.37
		1085	$ 27.90
	Tape & Reel (TR)	1000	$ 23.71
Newark	Each (Supplied on Cut Tape)	1	$ 29.02
		10	$ 23.89
		25	$ 23.10
		50	$ 22.85

Description

General part information

SCT4013DW7 Series

SCT4013DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

SCT4013DW7TL

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SCT4013DW7TL

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Technical Specifications

SCT4013DW7 Series

Pricing

Description

SCT4013DW7 Series

Documents

Technical Data Sheet EN

How to Use LTspice&reg; Models: Tips for Improving Convergence

How to Use PSIM Models

About Export Administration Regulations (EAR)

Condition of Soldering

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

About Flammability of Materials

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What is a Thermal Model? (SiC Power Device)

5kW Inverter Circuit Using 4th Generation SiC MOSFETs

Design Method for Comparator-less Miller Clamp Circuits

Moisture Sensitivity Level

Thermal Resistance Measurement Method for SiC MOSFET

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

How to Use Thermal Models

Method for Monitoring Switching Waveform

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

How to Suppress the Parallel Drive Oscillation in SiC Modules

TO-263-7L Explanation for Marking

Oscillation countermeasures for MOSFETs in parallel

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Types and Features of Transistors

5kW High-Efficiency Fan-less Inverter

Importance of Probe Calibration When Measuring Power: Deskew

What Is Thermal Design

Precautions during gate-source voltage measurement for SiC MOSFET

TO-263-7L Taping Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Gate-source voltage behaviour in a bridge configuration

Precautions for Thermal Resistance of Insulation Sheet

Snubber circuit design methods for SiC MOSFET

800V Three-Phase Output LLC DC/DC Resonant Converter

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

How to Use LTspice&reg; Models

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Compliance of the ELV directive

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Calculating Power Loss from Measured Waveforms

Basics and Design Guidelines for Gate Drive Circuits

Anti-Whisker formation

How to Use PLECS Models

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Measurement Method and Usage of Thermal Resistance RthJC

TO-263-7L Inner Structure

Improvement of switching loss by driver source

SiC MOSFET Layout Design Considerations

Application Benefits of Using 4<sup>th</sup> Generation SiC MOSFETs

Application Note for SiC Power Devices and Modules

PCB Layout Thermal Design Guide

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Calculation of Power Dissipation in Switching Circuit

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Precautions When Measuring the Rear of the Package with a Thermocouple

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

Two-Resistor Model for Thermal Simulation

TO-263-7L Package Dimensions

Part Explanation

Solving the challenges of driving SiC MOSFETs with new packaging developments

Impedance Characteristics of Bypass Capacitor

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Judgment Criteria of Thermal Evaluation

Notes for Calculating Power Consumption:Static Operation

Notes for Temperature Measurement Using Thermocouples

Basics of Thermal Resistance and Heat Dissipation

How to measure the oscillation occurs between parallel-connected devices

θ<sub>JC</sub> and Ψ<sub>JT</sub>

4 Steps for Successful Thermal Designing of Power Devices

How to Use LTspice® Models: Tips for Improving Convergence

How to Use LTspice® Models