Discrete Semiconductor Products

SI1553CDL-T1-BE3

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MOSFET N/P-CH 20V 0.7A SC70-6

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Discrete Semiconductor Products

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MOSFET N/P-CH 20V 0.7A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1553CDL-T1-BE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	700 mA, 700 mA, 400 mA, 500 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	3 nC, 1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	38 pF, 43 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	340 mW, 290 mW
Rds On (Max) @ Id, Vgs	390 mOhm, 850 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Configuration	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI1553CDL-T1-BE3	38 pF 43 pF	290 mW 340 mW	390 mOhm 850 mOhm	Surface Mount	6-TSSOP SC-88 SOT-363	N and P-Channel	SC-70-6	400 mA 500 mA 700 mA 700 mA	-55 °C	150 °C	1.5 V	MOSFET (Metal Oxide)	1.8 nC 3 nC	20 V

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General part information

Mosfet Array 20V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6

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